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CYStech Electronics Corp. PNP Epitaxial Planar Transistor Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 1/4 BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features * High BVCEO * High DC current gain * High current capability * Monolithic construction with built-in base-emitter shunt resistors Equivalent Circuit BTA1210E3 C B Outline TO-220AB E BBase CCollector EEmitter BCE BTA1210E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw350s, Duty2%. Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 2/4 Symbol VCBO VCEO VEBO IC ICP Pd(TA=25) Pd(TC=25) RJA RJC Tj Tstg Limits -120 -120 -5 -10 -15 (Note ) 2 65 62.5 1.92 150 -55~+150 Unit V V V A A W W C/W C/W C C Characteristics (Ta=25C) Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 -5 1 100 Typ. Max. -200 -200 -2 -2 -4 -4.5 -2.8 12 300 Unit V V V A A mA V V V V K pF Test Conditions IC=-1mA, IB=0 IC=-100A, IE=0 IE=-1mA, IC=0 VCB=-120V, IE=0 VCE=-120V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-16mA IC=-8A, IB=-80mA IC=-8A, IB=-80mA VCE=-4V, IC=-4A VCE=-4V, IC=-4A VCE=-4V, IC=-8A VCB=-10V, IE=0A, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% BTA1210E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 10000 VCE=3V Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 10 VCESAT@IC=250IB Current Gain---HFE 1000 100 Saturation Voltage---(V) 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 1 0.1 100 1000 Collector Current---IC(mA) 10000 On voltage vs Collector Current 10 Power Dissipation---P D(W) VBEON@VCE=3V Power Derating Curve 2.5 2 1.5 1 0.5 0 On Voltage---(V) 1 0.1 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 Ambient Temperature---TA() 200 Power Derating Curve 70 Power Dissipation---PD(W) 60 50 40 30 20 10 0 0 50 100 150 200 Case Temperature---TC() BTA1210E3 CYStek Product Specification CYStech Electronics Corp. TO-220AB Dimension Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 4/4 A D B E C Marking: A1210 H I G 4 P M 3 2 1 N Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector K O 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1210E3 CYStek Product Specification |
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